作者: Chinmoy Bhattacharya , Jayati Datta
DOI: 10.1007/S10008-005-0091-X
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摘要: In the present investigation, polycrystalline semiconductor Cd–Se–Te films have been electrodeposited at room temperature on conducting glass substrates using cyclic voltammetric technique under controlled periodic scans. The successive anodic and cathodic scans were recorded within potential range, from 0 to −1.0 V, over range of cycles, 250 2,000, in an acidic bath containing respective reducible precursor ions like Cd2+, Se4+, Te4+, 1 vol.% Triton X-100 as surface-active reagent. Thin composite produced having variable thickness composition grain size order 80–100 nm. film properties determined by focused ion beam analysis, energy dispersive analysis x-rays, x-ray diffraction studies, atomic force microscopy, scanning electron microscopy. Thickness was found increase linearly with number cycles. Band gap energies derived reflectance spectra lie between 1.4 1.7 eV. ternary system when electrochemically characterized aqueous polysulfide solution exhibited n-type semiconducting photoconversion efficiency more than 0.4%.