Vapor growth and characterization of Cr-doped CdS0.8Se0.2 single crystals
作者： U.N. Roy , O.S. Babalola , Y. Cui , M. Groza , T. Mounts
DOI: 10.1016/J.JCRYSGRO.2004.01.065
关键词: Single crystal 、 Absorption (electromagnetic radiation) 、 Doping 、 Absorption spectroscopy 、 Chemistry 、 Analytical chemistry 、 Spectroscopy 、 Ingot 、 Ternary compound 、 Dopant
摘要: Abstract CdS0.8Se0.2 crystals doped with Cr2+ at a level of ∼1.2×1018 ions/cm3 were grown by the self-seeded physical vapor transport technique in vertical configuration. The ternary compound was synthesized from stoichiometric mixture vacuum sublimed CdS and CdSe. growth temperature 950°C it produced single crystal free cracks precipitates. absorption peak maximum for ion found to be 1.85 μm its intensity used determine dopant concentration axial distribution. radial uniformity S/Se ratio determined energy dispersive X-ray spectroscopy uniform throughout ingot practically identical composition source.
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