作者: U. N. Roy , O. S. Babalola , J. Jones , Y. Cui , T. Mounts
DOI: 10.1007/S11664-005-0174-6
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摘要: The Cr2+ doped CdS0.8Se0.2 crystals were grown by the vertical, self-seeded, physical vapor transport (PVT) technique. Good quality, crack- and inclusion-free single with an average concentration of 5 × 1018 cm−3. Different source-to-tip distances used to improve segregation coefficient (Crcrystal/Crsource) crystals. It was observed that lowering distance increases dramatically. With a 2-cm distance, good quality uniform throughout ingot. found be ∼0.85. composition also fairly along length across diameter.