作者: V. Kasiyan , Z. Dashevsky , R. Shneck , E. Towe
DOI: 10.1016/J.JCRYSGRO.2005.12.118
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摘要: Abstract CdSe crystals were grown by the seeded physical vapor transport method with helium on CdS 0.67 Se 0.33 seeds. A CrSe source was used for doping of both and seed chromium during growth. An absorption peak in near-IR range 1.5–2.2 μm associated intracenter 5 T 2 → E transitions Cr 2+ ions realized. The concentration various samples calculated using experimentally obtained values coefficients, it found to vary from 10 17 3×10 18 cm −3 . ‘blue’ shift -related band maximum relatively matrix demonstrated first time. measured Hall mobility charge carriers at a level 2×10 reached value 6000 cm /V s 50 K.