Vapor Growth and Characterization of Cr-Doped ZnSe Crystals

摘要: Abstract Cr-doped ZnSe single crystals were grown by a self-seeded physical vapor transport technique in both vertical (stabilized) and horizontal configurations. The source materials mixtures of CrSe. Growth temperatures the range 1140–1150°C furnace translation rates 1.9–2.2 mm/day. surface morphology as-grown was examined scanning electron microscopy (SEM) atomic force (AFM). Different features vertically horizontally suggest that different growth mechanisms involved two [Cr] doping levels determined to be 1.8–8.3×10 19  cm −3 from optical absorption measurements. crystalline quality high-resolution triple-crystal X-ray diffraction (HRTXD) analysis.