Effect of disorder on the optical spectra of wide-gap II–VI semiconductor solid solutions

摘要: Abstract Experimental results on the optical properties of wide-gap II–VI semiconductor solid solutions are reviewed. The main attention is given to effect solution disorder density states and dynamical electronic excitations. compositional, positional or structural origin causes scattering excitons carriers as well exciton carrier localization, leading a strong modification excitations near band edges in solutions. As it evidenced by studies absorption reflection spectra at alloying produces qualitatively similar broadening fundamental edge with substitution anion cation sublattices. However, recombination processes through luminescence reveal that essentially different these two classes Whereas an efficient localization holes has been observed low temperatures energy migration sublattice not so strongly affected alloying. localized widely discussed.