Growth of undoped and chromium-doped CdS x Se 1-x crystals by the physical vapor transport method
作者： U. N. Roy , Y. Cui , C. Barnett , K. -T. Chen , A. Burger
DOI: 10.1007/S11664-002-0237-X
关键词:
摘要: Chromium-doped CdSe is one of the host materials being considered for solid-state tunable mid-infrared (IR) lasers. Alloying with CdS allows increase thermal conductivity crystal (for a factor 4 larger than CdSe), which favorable parameter as laser host. In this study, we have grown CdSxSe1-x (x ≅ 0.8) single crystals by physical vapor transport (PVT) method. Crystals dimensions 1.2 cm in diameter and 5 length, free precipitates inclusions, been grown. Chromium ions were diffused into postgrowth-diffusion technique at 900°C. Incorporation Cr ion gives rise to broad absorption peak 1.87 µm.
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