作者: A Mycielski , A Szadkowski , E Łusakowska , L Kowalczyk , J Domagała
DOI: 10.1016/S0022-0248(98)00740-4
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摘要: Abstract It is shown that very high quality (in particular – good real crystal structure) of the single crystals ZnTe and Cd 1− x Zn Te, intended to be substrates for MBE other techniques epitaxy, can reached by an optimized physical vapor transport (PVT) technique. The obtained are twin-free, narrowness rocking curve nearly reaches theoretical limit density dislocations low. results characterization presented.