Epitaxial growth and photoluminescence of hexagonal CdS1−xSex alloy films
作者： M. Grün , H. Gerlach , Th. Breitkopf , M. Hetterich , A. Reznitsky
DOI: 10.1016/0022-0248(94)00486-2
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摘要: Abstract CdSSe ternary alloy films were grown on GaAs(111) by hot-wall beam epitaxy. The hexagonal crystal phase is obtained. composition varies from 0 to 40% selenium. Luminescence spectroscopy at low temperatures shows a dominant effect disorder. Localization of carriers, for example, still observed pulsed optical excitation density 6 mJ/cm 2 . overall quality the sufficient use them as buffer layers growth superlattices.
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