Epitaxial growth of CdS and CdS1−ySey thin films by hydrogen transport from the elements and their photoluminescent properties
作者： Michael Claybourn , Michael D. Scott , John O. Williams , Robert C. Goodfellow
DOI: 10.1016/0022-0248(82)90290-1
关键词: Emission spectrum 、 Impurity 、 Photoluminescence 、 Exciton 、 Epitaxy 、 Acceptor 、 Ternary operation 、 Optoelectronics 、 Analytical chemistry 、 Materials science 、 Thin film
摘要: Abstract Epitaxial layers of CdS and 1− y Se ( =0 to 0.12) have been grown on (111) A InP substrates by hydrogen transport from elemental Cd S H 2 S. Lattice matching is achieved for ca. 0.08. The low temperature photoluminescence films dominated intense bound exciton - neutral donor emission (I ) together with weaker acceptor 1 emissions. donor-acceptor recombination (D-A), prevalent in single crystalline samples, if greatly diminished intensity epilayers. concentration shallow impurity acceptors our may be due the incorporation phosphorons substrate. Excitonic as a result centres either rapid diffusion In substrate into epilayers or native defects. No deep level observed near band edge persists room temperature. shifts lower energy increasing predominant I line increases width. ternary exhibit broadening strain, deformation non-uniform distribution addition attributed uniform Se.
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