Preparation and characterization of CdS/CdTe heterostructures
作者： A.M. Mancini , L. Vasanelli , C. De Blasi
DOI: 10.1016/0022-0248(86)90547-6
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摘要: Abstract The deposition of cadmium sulphide films on telluride substrates, by closed-tube chemical vapour deposition, has been investigated using hydrogen as a transporting agent. Several runs were performed in order to determine the values experimental parameters necessary produce best quality films. These obtained at source temperature 730°C and 630°C, with pressure 250 Torr. Films grown under these conditions generally have good epitaxial relationship. For slightly different growth parameters, contain pinholes hollow crystalline grains, is often case for other II-VI compounds phase.
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