Accurate modeling of centroid shift in III-V FETs including non-linear potential profile and wave-function penetration
作者： Deepak Kumar Singh , Avirup Dasgupta , Yogesh Singh Chauhan
DOI: 10.1109/ICEMELEC.2016.8074581
关键词:
摘要: A quantum mechanical model of charge centroid is presented for III-V FETs. The takes into account the finite potential barrier at semiconductor/insulator interface and also non-linearity profile. two energy subbands to calculate shift has been validated against TCAD simulations.
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