Phenomenological Compact Model for QM Charge Centroid in Multigate FETs
作者： Sriramkumar Venugopalan , Muhammed A. Karim , Sayeef Salahuddin , Ali M. Niknejad , Chenming Calvin Hu
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摘要: We present a phenomenological compact model of the inversion charge centroid considering both structural and electrical confinements in multigate FETs. The developed new shows good match with Technology-CAD (TCAD) data for physical parameters such as fin thickness FinFET wire radius cylindrical FET, channel doping, bias variation. With introduction fitting parameters, is capable handling hole electron carriers, various materials, process variations, shape, etc.
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