Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region
作者： Yu-Sheng Wu , Pin Su
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摘要: This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our accurately predicts impact of and doping concentration on effects. scalable is crucial to ultrascaled GAA MOSFET design.
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