Review of the theory of amorphous semiconductors

摘要: Abstract The existing simple models of the electronic structure disordered materials are reviewed. focus is on universal features these and their consequences for amorphous semiconductors. Simple plausibility arguments given showing that continuous bands extended states with tails localized associated fluctuations within material can always be expected. Models mobility in which shoulders occur at energies transition from to It a gap rather than density responsible activated temperature dependence conductivity Hopping conduction nature motion near edges discussed. latter likened Brownian certain limitations. Finally, Anderson discussed present models.