作者: Mou-Shiung Lin , Jin-Yuan Lee , Ying-Chih Chen
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摘要: A method and structure are provided to enable wire bond connections over active and/or passive devices low-k dielectrics, formed on an Integrated Circuit die. semiconductor substrate having is provided, with interconnect metallization the devices. passivation layer wherein openings in upper metal of metallization. Compliant pads layer, compliant connected through substantially The may be a composite structure.