Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body
作者： Johannes Stefanus Peters
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摘要: A method of manufacturing a semiconductor device comprising body (1), which surface (13) is provided with metallization (15,16,17,18) thick connection electrode (19). The formed in first metal layer (49) and the second (51). Between these layers third (50), serves as an etching stopper during formation electrode. During single deposition step, three (49,50,51) are provided, after then by etching. By providing number processing steps for limited it moreover achieved that adhesion between (19) optimum.
lens.org 参考文章(18)
King Owyang, Leonard Stein, Semiconductor device with built-up low resistance contact ,(1983)
Homi G. Sarkary, Bisweswar Patnaik, Hormazdyzr D. Dalal, Forming interconnections for multilevel interconnection metallurgy systems ,(1982)
Ronald D. Hall, Thin film microstrip circuits ,(1982)
PramodC Karulkar, Method for making a reliable ohmic contact between two layers of integrated circuit metallizations Microelectronics Reliability. ,vol. 26, pp. 395- 396 ,(1983) , 10.1016/0026-2714(86)90737-7
Richard A. Edwards, John Thomas Robinson, Gold-germanium alloy contacts for a semiconductor device ,(1975)
David C. Bullock, Shalendra K. Singh, Robert E. Fontana, John M. Bush, Method of fabricating magnetic bubble memory device having planar overlay pattern of magnetically soft material ,(1979)
Wolfgang Ganser, Method for producing metal contacts for mounting semiconductor components in housings ,(1969)
James M. Harris, Method for forming gang bonding bumps on integrated circuit semiconductor devices ,(1975)
Widmann Hermann, Hartmann Horst Joachim, Method of producing semiconductor assemblies ,(1965)
Dervin L. Flowers, V. Louise Rice, Richard L. Greeson, Semiconductor device having a tin metallization system and package containing same ,(1978)