Isolation structures for imposing stress patterns
作者： Dureseti Chidambarrao , Omer H. Dokumaci , Bruce B. Doris , Jack A. Mandelman
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摘要: A substrate under tension and/or compression improves performance of devices fabricated therein. Tension can be imposed on a through selection appropriate STI fill material. The regions are formed in the layer and impose forces adjacent areas. areas or exhibit charge mobility characteristics different from those non-stressed substrate. By controllably varying these stresses within NFET PFET substrate, improvements IC achieved.
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