Improved Extrinsic Base Resistance Extraction for InP DHBT Devices

摘要: In this paper a novel extraction method for finding the extrinsic base resistance Rbx InP DHBT devices is investigated. The based on physical modeling of intrinsic base-collector capacitance Cbci versus collector current Ic when fully depleted. This makes it possible to determine as extrapolated value effective base-resistance Rb,eff = R(Z11 - Z12) at Ip/(1 X0) where Ip characteristic and X0 splitting factor zero current. determination parameters described. works well lower without requirement significant reduction due crowding.