Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs
作者： J. Godin , V. Nodjiadjim , M. Riet , P. Berdaguer , O. Drisse
关键词:
摘要: We report on the development of a submicron InP DHBT technology, optimized for fabrication ges50-GHz- clock mixed-signal ICs. In-depth study device geometry and structure has allowed to get needed performances yield. Special attention been paid critical thermal behavior. Various size devices have modeled using UCSD- HBT equations. These large signal models design 50-GHz clocked 50 G Decision 100 Selector circuits. The high quality measured characteristics demonstrates suitability this technology various applications interest, like Gbit/s transmission.
sci-hub.se 参考文章(18)
Viktor Krozer, Agnieszka Konczykowska, Tom Johansen, Jean-Yves Dupuy, Virginie Nodjiadjim, Improved Extrinsic Base Resistance Extraction for InP DHBT Devices german microwave conference. pp. 1- 4 ,(2008)
R.-E. Makon, R. Driad, K. Schneider, R. Aidam, M. Schlechtweg, G. Weimann, Fundamental W-Band InP DHBT-Based VCOs With Low Phase Noise and Wide Tuning Range international microwave symposium. pp. 649- 652 ,(2007) , 10.1109/MWSYM.2007.379985
T. K. Johansen, V. Krozer, A. Konczykowska, M. Riet, J. Vidkjaer, Large-Signal Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding international microwave symposium. pp. 655- 658 ,(2006) , 10.1109/MWSYM.2006.249699
Y. Baeyens, N. Weimann, V. Houtsma, J. Weiner, Y. Yang, J. Frackoviak, P. Roux, A. Tate, Y. K. Chen, Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth international microwave symposium. pp. 818- 821 ,(2006) , 10.1109/MWSYM.2006.249798
V. Nodjiadjim, M. Riet, A. Scavennec, P. Berdaguer, J.L. Gentner, J. Godin, P. Bove, M. Lijadi, Comparative collector design in InGaAs and GaAsSb based InP DHBTs international conference on indium phosphide and related materials. pp. 1- 4 ,(2008) , 10.1109/ICIPRM.2008.4702996
M.J.W. Rodwell, Minh Le, B. Brar, InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies Proceedings of the IEEE. ,vol. 96, pp. 271- 286 ,(2008) , 10.1109/JPROC.2007.911058
P. Andre, S. Blayac, P. Berdaguer, J.-L. Benchimol, J. Godin, N. Kaffmann, A. Konczykowska, A.-E. Kasbari, M. Riet, InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits IEEE Journal of Solid-state Circuits. ,vol. 36, pp. 1321- 1327 ,(2001) , 10.1109/4.944658
Kiyoshi Ishii, Very-High-Speed InP/InGaAs HBT Multiplexer ICs for Optical Communication Systems international symposium on intelligent signal processing and communication systems. pp. 247- 250 ,(2006) , 10.1109/ISPACS.2006.364878
I. Harrison, M. Dahlstrom, S. Krishnan, Z. Griffith, Y.M. Kim, M.J.W. Rodwell, Thermal limitations of InP HBTs in 80- and 160-gb ICs IEEE Transactions on Electron Devices. ,vol. 51, pp. 529- 534 ,(2004) , 10.1109/TED.2004.824686
Z. Griffith, Yingda Dong, D. Scott, Yun Wei, N. Parthasarathy, M. Dahlstrom, C. Kadow, V. Paidi, M.J.W. Rodwell, M. Urteaga, R. Pierson, P. Rowell, B. Brar, Sangmin Lee, N.X. Nguyen, C. Nguyen, Transistor and circuit design for 100-200 GHz ICs compound semiconductor integrated circuit symposium. ,vol. 40, pp. 2061- 2069 ,(2004) , 10.1109/JSSC.2005.854609