作者: Andre Scavennec , Jean Godin , Catherine Algani , Thomas Merlet , Jean-Luc Polleux
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摘要: This paper presents the spatially dependent analysis of frequency behavior an InP/InGasAs UTC-HPT. It outlines steps needed to perform phototransistor characterization. starts with design automated test measurement setup and implementing different post-processing routines for measurements de-embedding. These de-embedding techniques are then evaluated their relative accuracy. Finally, extracted mapping is analyzed evaluate lateral spatial dependencies UTC-HPT's responsivity. In particular, 1A/W 52μm wide UTC-HPT under exhibits improvement in performance 3μm vicinity electrical contacts.