Frequency response enhancement of a single strained layer SiGe phototransistor based on physical simulations
作者： H. Schumacher , C. Rumelhard , J.L. Polleux , F. Moutier
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摘要: An original approach based on a physical model is used to evaluate opto-microwave performances of vertically illuminated single strained layer SiGe HPT. Analysis performance presented at 940 nm. The contribution each region the dynamic studied. Frequency response enhancement shown for base optical detection first and also by wavelength analysis while maintaining whole component detection. Increases up 9.8 factor -3 dB-bandwidth (f/sub dB/) in photodiode mode 2.2 transition frequency Topt/) photo transistor are presented, reaching respectively 19.7 GHz 15.3 GHz.
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