An 850 nm SiGe/Si HPT with a 4.12 GHz maximum optical transition frequency and 0.805A/W responsivity
作者： Zerihun Gedeb Tegegne , Carlos Viana , Marc D. Rosales , Julien Schiellein , Jean-Luc Polleux
DOI: 10.1017/S1759078715001531
关键词:
摘要: A 10 × μm2 SiGe heterojunction bipolar photo-transistor (HPT) is fabricated using a commercial technological process of 80 GHz transistors (HBT). Its technology and structure are first briefly described. optimal opto-microwave dynamic performance then analyzed versus voltage biasing conditions for continuous wave measurements. The points chosen in order to maximize the optical transition frequency (fTopt) responsivity HPT. An scanning near-field microscopy (OM-SNOM) performed these optimum bias localize region HPT with highest response. OM-SNOM results key extract coupling probe (of 32.3%) thus absolute effect substrate also observed as it limits extraction intrinsic performance. maximum 4.12 an low 0.805A/W extracted at 850 nm.
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