33–43 GHz and 66–86 GHz VCO With High Output Power in an 80 GHz ${\rm f}_{\rm T}$ SiGe HBT Technology
作者： Gang Liu , Andreas Trasser , Hermann Schumacher
DOI: 10.1109/LMWC.2010.2066262
关键词:
摘要: This letter presents a signal generation circuit that combines wide tuning range voltage controlled oscillator (VCO) and frequency doubler. The VCO provides two differential outputs with different power levels. A push-push doubler is designed cascaded to the high output of VCO, while low reserved drive divider in PLL. can be tuned from 33 43 GHz, around 0 dBm at output. Simultaneously, 66 86 GHz achieved output, maximum -1.1 74 (-2.5 81 GHz). measured phase noise are -91 dBc/Hz -83 1 MHz offset (-112 -106 10 offset), respectively. realized 0.8 SiGe heterojunction bipolar transistor process, fT/fmax 80/90 GHz. consumes mA current an extra 17 4 V supply. demonstrates possibility wide-band up fmax sufficient (e.g. mixer) conservatively scaled, low-cost process.
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