摘要: The integration of the photodetector is essential for optical communication chips. heterojunction phototransistor (HPT) integrable with SiGe HBT process and can be modeled by a modified MEXTRAM model circuit simulation. impact ionization to obtain an extra gain optoelectronic conversion "early voltage reduction" under constant illumination are well in model. base recombination current (nkT current) substrate contact enhance HPT speed incorporated ac It shows good agreement between measurement
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