Effects of Body Doping in a NAND Flash String without Source/Drain

摘要: Cell structure using fringing field from control gate (CG) is very promising for a scaled NAND flash memory beyond sub-40 nm node. We investigated new string not with n-type source/drain (S/D) regions but p-type in the space between gates. Even though has region instead of S/D adjacent two cells, induced layer (virtual source/drain) can be easily formed by CGs. When comparing conventional S/D, proposed shows better drain barrier leakage (DIBL) and subthreshold swing (SS) characteristics, also immunity against process variation than S/D. The electrical characteristics were as parameters width doping concentration at p/n-type region. As cell string, current drivability was studied.