作者: A. R. Malosiev , V. G. Plotnichenko , A. O. Rybaltovskii , V. O. Sokolov , V. V. Koltashev
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摘要: The formation of Ge nanoclusters in bulk and thin-film germanosilicate glass samples prepared by vapor deposition techniques then heat-treated molecular hydrogen at 800°C was studied Raman scattering optical spectroscopy. results demonstrate that the is accompanied a substantial increase concentration oxygen-deficient germanium centers OH groups. A mechanism nanocluster proposed. effects different process parameters on growth course preform fabrication fiber drawing are examined.