Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers
作者： K.H Heinig , B Schmidt , A Markwitz , R Grötzschel , M Strobel
DOI: 10.1016/S0168-583X(98)00862-3
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摘要: Abstract The Ge redistribution and nanocrystal formation in + implanted SiO 2 layers have been systematically studied by RBS, TEM XPS. Annealing N or Ar leads to a dramatic change of the as-implanted Gaussian-like depth distribution bimodal profile and, additionally, an accumulation at Si/SiO interface. XTEM images show no nanocrystals region sub-surface peak, whereas deeper peak can be clearly related nanocrystals. A similar occurs after annealing pure O , but this case amorphous GeO x clusters found too. behaviour is explained in-diffusion oxidant (O few ppm moisture) from ambient its subsequent reaction with dissolved and/or clustered Ge. Kinetic 3D lattice Monte-Carlo simulations performed prove model nanocluster evolution.
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