Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation
作者： Victor Boureau , Daniel Benoit , Bénédicte Warot , Martin Hÿtch , Alain Claverie
DOI: 10.1016/J.MSSP.2015.07.034
关键词: Materials science 、 Silicon on insulator 、 Fabrication 、 Buried oxide 、 Optoelectronics 、 Electron holography 、 Crystallography 、 Insulator (electricity) 、 Lattice (order)
摘要: We study the interplay between strain and composition during elementary process steps which allow fabrication of strained ultra-thin SiGe layers on insulators from a Silicon-On-Insulator (SOI) substrate by Ge condensation technique. Strain maps with subnanometer resolution high precision are obtained using dark-field electron holography confirm that two basic mechanisms drive final top layer, namely injection oxidation Si/Ge interdiffusion, both thermally activated. show this observed results out-of-plane relaxation stress generated substitution Si atoms in lattice, rigidly bounded to underlying buried oxide.
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sci-hub.se 参考文章(11)
R. Kube, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. E. Haller, S. Paul, W. Lerch, Composition dependence of Si and Ge diffusion in relaxed Si1−xGex alloys Journal of Applied Physics. ,vol. 107, pp. 073520- ,(2010) , 10.1063/1.3380853
M. V. Fischetti, S. E. Laux, Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys Journal of Applied Physics. ,vol. 80, pp. 2234- 2252 ,(1996) , 10.1063/1.363052
K.H Heinig, B Schmidt, A Markwitz, R Grötzschel, M Strobel, S Oswald, Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 148, pp. 969- 974 ,(1999) , 10.1016/S0168-583X(98)00862-3
F. K. LeGoues, R. Rosenberg, B. S. Meyerson, Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation Applied Physics Letters. ,vol. 54, pp. 644- 646 ,(1989) , 10.1063/1.100905
Tsutomu Tezuka, Naoharu Sugiyama, Tomohisa Mizuno, Masamichi Suzuki, Shin-ichi Takagi, A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs Japanese Journal of Applied Physics. ,vol. 40, pp. 2866- 2874 ,(2001) , 10.1143/JJAP.40.2866
R. People, J. C. Bean, Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures Applied Physics Letters. ,vol. 47, pp. 322- 324 ,(1985) , 10.1063/1.96206
Yoshihito Maeda, Visible photoluminescence from nanocrystallite Ge embedded in a glassy SiO 2 matrix: Evidence in support of the quantum-confinement mechanism Physical Review B. ,vol. 51, pp. 1658- 1670 ,(1995) , 10.1103/PHYSREVB.51.1658
Martin M. Rieger, P. Vogl, Electronic-band parameters in strained Si 1 − x Ge x alloys on Si 1 − y Ge y substrates Physical Review B. ,vol. 48, pp. 14276- 14287 ,(1993) , 10.1103/PHYSREVB.48.14276
Tsutomu Tezuka, Naoharu Sugiyama, Shin-ichi Takagi, Dislocation-free relaxed SiGe-on-insulator mesa structures fabricated by high-temperature oxidation Journal of Applied Physics. ,vol. 94, pp. 7553- 7559 ,(2003) , 10.1063/1.1628404
Martin Hÿtch, Florent Houdellier, Florian Hüe, Etienne Snoeck, Nanoscale holographic interferometry for strain measurements in electronic devices Nature. ,vol. 453, pp. 1086- 1089 ,(2008) , 10.1038/NATURE07049