Resistance Extraction from Mask Layout Data

作者: M. Horowitz , R.W. Dutton

DOI: 10.1109/TCAD.1983.1270032

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摘要: This paper presents a new algorithm to extract resistance values from an integrated circuit artwork description. Instead of trying solve for the exact values, heuristics are used find approximate solution. The first breaks input polygons into simple pieces, and then finds through each piece. procedure enables extraction be both fast memory efficient. splitting calculating pieces' derived rules electrostatics, yield answers that within 10 percent values. operations needed break complex simpler pieces very similar other geometric in analysis systems.

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