HIPARE: Circuit and Parameter Extraction from Mask Layout Data
作者： U. Roettcher , J. Fritz , K. G. Hess
DOI: 10.1109/ESSCIRC.1986.5468437
关键词:
摘要: We present a program for technology independent parameter extraction of MOS circuits. It provides all necessary algorithms detailed layout analysis including the computation parasitic resistors and capacitors. Special interest is focused on implementation from graphic data allowing arbitrary shapes.
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