作者: Hua Bai , Zhengming Zhao , Mohamed Eltawil , Liqiang Yuan
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摘要: Integrated gate commutated thyristors (IGCTs) are commonly used for high-voltage three-level pulsewidth-modulation-controlled voltage-source inverters. IGCTs utilized in series connection when the output voltage is greater than maximum rated voltage. Special measure must be taken to ensure safety and reliable operation of inverters, equalize voltages across IGCT modules, such as dynamic voltage-balancing circuit using an snubber circuit. Based on functional model, this paper presents optimization design procedure a high-voltage-balancing 6-kV/1250-kW inverter. A tradeoff made between imbalance, turn-on current, endurance, losses. Simulation experiments validate feasibility procedure. In addition, specific transient processes topology with simulated, their inner mechanisms analyzed.