Development of a Scalable Power Semiconductor Switch (SPSS)

作者: Hongfang Wang , Alex Q. Huang , Fei Wang

DOI: 10.1109/TPEL.2006.889892

关键词: Optical switchLow voltageInsulated-gate bipolar transistorSeries and parallel circuitsDynamic voltage scalingElectronic engineeringElectrical engineeringPower semiconductor devicePower electronicsIntegrated circuitEngineering

摘要: This paper presents the design and development of a 4800-V, 300-A, 10-kHz scalable power semiconductor switch (SPSS) based on series connecting low voltage insulated gate bipolar transistors (IGBTs). The static dynamic balance among IGBTs is achieved using hybrid approach active clamp circuit an control that also effective during tail current phase. developed SPSS derives its directly from main bus. Control, packaging, thermal characteristics are integral part design. From user's standpoint, three-terminal optically controlled high-power switch. Experimental evaluation prototype shows it fully objectives. In principle, can be extended to building switches with higher voltages, currents, switching frequencies, or even other types devices than

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