An improved gate control scheme for snubberless operation of high power IGBTs

摘要: This paper proposes a new gate drive circuit for IGBTs which can actively suppress the voltage overshoot across driven IGBT at turn-off and opposite turn-on while preserving most simple reliable power circuit. The driving scheme has an adaptive feature to amplitude of collector current, so that overvoltage is limited much more effectively fault current. used decrease rise rate current by increasing input capacitance during transients when gate-emitter greater than threshold voltage. Experimental results under various normal conditions prove effectiveness proposed