Memory cell having combination raised source and drain and method of fabricating same

作者： Takashi Orimoto , Mark T. Ramsbey , Ashot Melik-Martirosian

DOI:

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摘要: A memory device and a method of fabrication are provided. The includes semiconductor substrate charge trapping dielectric stack disposed over the substrate. gate electrode is stack, where electrically defines channel within portion pair raised bitlines, bitlines have lower formed by first process an upper second process.

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