Weak localization in a GaAs heterostructure close to population of the second subband
作者： J. E. Hansen , R. Taboryski , P. E. Lindelof
DOI: 10.1103/PHYSREVB.47.16040
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摘要: Weak-localization magnetoresistance has been measured as a function of carrier density using backgate technique. The phase relaxation rate and the spin-orbit have determined. dominating contribution to comes from electron-electron interaction, demonstrated for samples covering densities 2.5 7.5×10 15 m -2 . Interband scattering is found enhance relaxation. A strictly two-dimensional electron gas (2DEG) quenches in plane 2DEG, 1/τ so xy , whereas orthogonal part, z appears added interpretation weak-localization magnetoresistance, can be determined saturation value at low temperatures
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