Analysis of Point Defect Distributions in AlGaN/GaN Heterostructures via Spectroscopic Photo Current-Voltage Measurements

作者: Burcu Ozden , Min P. Khanal , Suhyeon Youn , Vahid Mirkhani , Kosala Yapabandara

DOI: 10.1149/2.0281604JSS

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参考文章(33)
J. K. Larsen, S.-Y. Li, J. J. S. Scragg, Y. Ren, C. Hägglund, M. D. Heinemann, S. Kretzschmar, T. Unold, C. Platzer-Björkman, Interference effects in photoluminescence spectra of Cu2ZnSnS4 and Cu(In,Ga)Se2 thin films Journal of Applied Physics. ,vol. 118, pp. 035307- ,(2015) , 10.1063/1.4926857
Jörg Neugebauer, Chris G. Van de Walle, Gallium vacancies and the yellow luminescence in GaN Applied Physics Letters. ,vol. 69, pp. 503- 505 ,(1996) , 10.1063/1.117767
Burcu Ozden, Chungman Yang, Fei Tong, Min P. Khanal, Vahid Mirkhani, Mobbassar Hassan Sk, Ayayi Claude Ahyi, Minseo Park, Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si Applied Physics Letters. ,vol. 105, pp. 172105- ,(2014) , 10.1063/1.4900869
H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, C. Thomsen, Zone-boundary phonons in hexagonal and cubic GaN Physical Review B. ,vol. 55, pp. 7000- 7004 ,(1997) , 10.1103/PHYSREVB.55.7000
V. Yu. Davydov, Yu. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, R. A. Evarestov, Phonon dispersion and Raman scattering in hexagonal GaN and AlN Physical Review B. ,vol. 58, pp. 12899- 12907 ,(1998) , 10.1103/PHYSREVB.58.12899
R. Armitage, Q. Yang, E. R. Weber, Analysis of the carbon-related 'blue' luminescence in GaN Journal of Applied Physics. ,vol. 97, pp. 073524- ,(2005) , 10.1063/1.1856224
Michael A. Reshchikov, Hadis Morkoç, Luminescence properties of defects in GaN Journal of Applied Physics. ,vol. 97, pp. 061301- ,(2005) , 10.1063/1.1868059
H. M. Chen, Y. F. Chen, M. C. Lee, M. S. Feng, Yellow luminescence inn-type GaN epitaxial films Physical Review B. ,vol. 56, pp. 6942- 6946 ,(1997) , 10.1103/PHYSREVB.56.6942
Wolfgang W. Gärtner, Depletion-Layer Photoeffects in Semiconductors Physical Review. ,vol. 116, pp. 84- 87 ,(1959) , 10.1103/PHYSREV.116.84
X. Li, P. W. Bohn, J. J. Coleman, Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth Applied Physics Letters. ,vol. 75, pp. 4049- 4051 ,(1999) , 10.1063/1.125532