Characterization of low-resistivity indium oxide films by Auger electron spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction and correlation between their properties, composition, and texture

摘要: Auger electron spectroscopy, x‐ray photoelectron and diffraction (XRD) were employed to investigate the stoichiometry texture of indium‐oxide films. The films prepared by reactive evaporation ion plating pure indium in an oxygen atmosphere ∼10−4 Torr. Standard In In2O3 grains used estimate atomic concentration identify film orientation. We correlated electrical optical properties with their texture. It was found that exhibiting low resistivity have ratios O 1.29–1.31 full widths at half‐maximum for (222) XRD peaks 0.32°–0.34°.