作者: Y Gu , Igor L Kuskovsky , GF Neumark , X Zhou , O Maksimov
DOI: 10.1016/S0022-2313(02)00666-X
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摘要: Abstract We present photoluminescence (PL) studies of Cl-doped Zn1−xBexSe (x=0–0.029) alloys performed in wide ranges temperature (10– 296 K ) and excitation intensities. show that the high-temperature PL is characterized by a free-to-acceptor-type transition, involving shallow state localized holes. shall similar transitions are also comparable undoped samples, but intensity substantially lower. Finally, we ionization energy relevant acceptor-like species increases with Be concentration, suggesting an effective mass type defect.