Growth rate and composition calibration of III/V materials on GaAs and InP using reflection high-energy electron diffraction oscillations
作者： R. F. Kopf
DOI: 10.1116/1.585380
关键词:
摘要: The use of reflection high‐energy electron diffraction oscillations to obtain lattice‐matched In0.53Ga0.47As and In0.52Al0.48As on InP is described. This method has also been extended the growth strained InyGa1−yAs InxAl1−xAs as well that quaternary In1−x−yGaxAlyAs compositions, in InP.
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