Glancing-angle ion bombardment for modification and monitoring of semiconductor surfaces
作者： J. G. C. Labanda , S. A. Barnett
DOI: 10.1007/S11664-997-0240-3
关键词:
摘要: Using glancing-angle ion bombardment for surface modification rather than conventional near-normal incidence ions has the advantages of reducing damage and implantation projected ranges, channeling, sputtering, preferentially removing asperities leading to flat surfaces. The effects conditions on morphology perfection GaAs (001), InP Si (001) surfaces are reported. Air-exposed were cleaned smoothened near atomic flatness without under optimal conditions. Sputtering yield, measured using film thicknesses changes in reflection high-energy electron diffraction oscillations, decreased with decreasing angle. low sputtering yield minimal make a geometry ideal real-time characterization by scattering spectroscopy. Surface composition measurements single monolayers InAs showed that Ar beam did not measurably change In coverage over relatively long times. A new monitoring technique was also developed utilizes ions. Specular 3 keV He observed angles 2–6° from (001). Oscillation specularly scattered current during growth periods corresponding monolayer oscillations allow simple quantitative interpretation based adatoms step edges.
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sci-hub.se 参考文章(23)
S. B. Ogale, A. Madhukar, M. Thomsen, Molecular beam epitaxial growth of III‐V compound semiconductor in the presence of a low‐energy ion beam: A Monte Carlo simulation study Applied Physics Letters. ,vol. 51, pp. 837- 839 ,(1987) , 10.1063/1.98829
D. G. Schimmel, A Comparison of Chemical Etches for Revealing Silicon Crystal Defects Journal of The Electrochemical Society. ,vol. 123, pp. 734- 741 ,(1976) , 10.1149/1.2132918
Horst Niehus, Werner Heiland, Edmund Taglauer, Low-energy ion scattering at surfaces Surface Science Reports. ,vol. 17, pp. 213- 303 ,(1993) , 10.1016/0167-5729(93)90024-J
R. F. Kopf, Growth rate and composition calibration of III/V materials on GaAs and InP using reflection high-energy electron diffraction oscillations Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 9, pp. 1920- 1923 ,(1991) , 10.1116/1.585380
J. C. Bean, G. E. Becker, P. M. Petroff, T. E. Seidel, Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon Journal of Applied Physics. ,vol. 48, pp. 907- 913 ,(1977) , 10.1063/1.323706
J. G. C. Labanda, S. A. Barnett, A novel tilt assembly for ultrahigh vacuum XYZ‐rotary manipulators Journal of Vacuum Science and Technology. ,vol. 14, pp. 485- 486 ,(1996) , 10.1116/1.580112
J. G. C. Labanda, S. A. Barnett, Ion-scattering spectroscopy during InGaAs molecular beam epitaxy: Reduction of sputtering using glancing-angle Ar ions Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 15, pp. 825- 829 ,(1997) , 10.1116/1.580715
E. Chason, T. M. Mayer, Low energy ion bombardment induced roughening and smoothing of SiO2surfaces Applied Physics Letters. ,vol. 62, pp. 363- 365 ,(1993) , 10.1063/1.108957
JGC Labanda, SA Barnett, L Hultman, Effects of glancing-angle ion bombardment on GaAs(001) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 13, pp. 2260- 2268 ,(1995) , 10.1116/1.588060
P Oelhafen, JL Freeouf, GD Pettit, JM Woodall, Elevated temperature low energy ion cleaning of GaAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 1, pp. 787- 790 ,(1983) , 10.1116/1.582693