Low energy ion bombardment induced roughening and smoothing of SiO2surfaces
作者： E. Chason , T. M. Mayer
DOI: 10.1063/1.108957
关键词: Ion beam 、 Smoothing 、 Mineralogy 、 Irradiation 、 Surface finish 、 Etching (microfabrication) 、 Chemistry 、 Surface roughness 、 Ion 、 Fluence 、 Molecular physics
摘要: Surface roughening and smoothing of SiO2 by low energy ion bombardment were investigated using in situ dispersive x‐ray reflectivity. Bombardment nominally smooth surfaces (initial roughness approx. 0.4 nm) 1 keV Xe increases the surface linearly with fluence. initially rough (roughness 0.2–1 H results an exponential decrease fluence at a rate that energy. The has different dependence than etching rate, ruling out simple relation between material removal morphology. A induced relaxation mechanism is suggested for behavior.
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