Elevated temperature low energy ion cleaning of GaAs

作者： P Oelhafen , JL Freeouf , GD Pettit , JM Woodall

关键词: Emission spectrum 、 Analytical chemistry 、 Ion 、 Impurity 、 Annealing (metallurgy) 、 Ultraviolet photoelectron spectroscopy 、 X-ray photoelectron spectroscopy 、 Low-energy electron diffraction 、 Electron diffraction 、 Chemistry

摘要: We have studied various cleaning procedures for obtaining atomically clean, well‐ordered surfaces of GaAs(100) and (110). evaluated the resulting by angle resolved ultraviolet photoelectron spectroscopy (ARUPS), x‐ray (XPS), low energy electron diffraction (LEED). report results thermally cleaned, ion bombarded annealed, bombardment at elevated temperature procedures. The most reproducible results, giving best, lowest background LEED patterns sharpest ARUPS were obtained from cleaned samples. Our samples, while showing impurity concentrations to XPS studies, had a relatively high pattern. not indicative degree surface order; normal emission spectra more resemble integrated UPS results. room followed anneals 30 min temperatures up 520 °C,...