New procedure for determination of the interface Fermi level position for atomic hydrogen cleaned GaAs(100) surface using photoemission

摘要: Abstract High-resolution photoemission yield spectroscopy (PYS) technique was used for studies of the electronic properties space-charge layer GaAs(100) surface cleaned by chemical reactions using atomic hydrogen, with special emphasis to energetic parameters including interface Fermi level position in band gap. The variation prepared standard wet preprocessing and after hydrogen were observed together evolution effective density filled states localized gap below E F . obtained results discussed compared those other groups classical modes spectroscopy.