Unusual electron beam effects in the GaAs (100)/Cl2 system

作者: S.M Mokler , P.R Watson

DOI: 10.1016/0038-1098(89)91070-3

关键词: DesorptionAugerSemiconductor materialsAnalytical chemistryAdsorptionSignalChlorineCathode rayChemistry

摘要: Abstract We find that chlorine adsorbed on a (1x1) GaAs (100) surface is very sensitive to electron-induced desorption. Loss of appears occur via at least one fast, and slow, route with different cross-sections. Changes in the Ga Auger signal indicate significant Ga-Cl interactions during adsorption

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