Surface core-level shifts for chlorine covered GaAs (1 1 0) surfaces
作者： R.D. Schnell , D. Rieger , A. Bogen , K. Wandelt , W. Steinmann
DOI: 10.1016/0038-1098(85)90127-9
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摘要: Abstract Photoemission measurements show that upon chlorine adsorption the Ga 3d surface core-level remains essentially unchanged whereas As level is shifted by 820 meV to higher binding energy changing sign of shift with respect bulk level. Chlorine thus bound in a single chemisorption state. The due charge transfer. does not change relaxation.
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