Initial oxidation of GaAs(110): A core-level photoemission study
作者： T. Miller , T.-C. Chiang
关键词: Core (optical fiber) 、 Core level 、 Torr 、 Atomic physics 、 OXYGEN EXPOSURE 、 Oxygen 、 Materials science
摘要: The initial oxidation of GaAs(110) is studied with high-resolution photoemission. Ga and As $3d$ core levels atoms within two to three atomic layers from the surface show small oxygen-induced shifts at about half-monolayer oxygen coverage [corresponding ${10}^{7}$ L (1 = ${10}^{\ensuremath{-}6}$ Torr sec) exposure]. a large chemical shift 3.0 eV are significantly produced only much higher exposures.
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