Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

摘要: The ability to rationally tune the morphology of nanostructures is a fundamental milestone in nanoscale engineering. In particular, possibility switch between different shapes within same material system represents further step development complex devices and it increases potential practical applications. We recently reported new form InAs growing epitaxially on Si substrates as vertical V-shaped membranes. Here we demonstrate modifying shape these nanomembranes turning them into nanowires by modulating surface roughness substrate varying treatment. show that growth favored smooth surfaces. Conversely rough surfaces enhance nanowires. also shove V/III ratio plays key role determining absolute yield, i.e. how many during growth. These results envisage degree freedom engineering bottom up contribute achievement nanostructure networks. (C) 2015 Elsevier B.V. All rights reserved.