ELECTRON TRANSPORT THROUGH A MESOSCOPIC DEVICE WITH THE SPIN-ORBIT COUPLING SEMICONDUCTOR LEADS
作者： SHU-GUANG CHENG , XIAO-JUAN ZHAO , PEI ZHAO
DOI: 10.1142/S0217979211100783
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摘要: The electronic transport through a mesoscopic confining region coupled to two spin-orbit coupling semiconductor leads is studied. We mainly focus on how the behaviors are affected by Rashba interaction (SOI), which has been neglected in previous theoretical papers but indeed exists from recent experimental results. By using Landauer–Buttiker formula and non-equilibrium Green's function method, linear conductance of this device obtained. numerical results exhibit that similar for cases absence presence SOI. It means SOI does not qualitatively affects behaviors. However, detail, peaks widened enhanced In some specific cases, widening enhancement could be very strong.
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