作者: Rahul Aher , Ajinkya Bhorde , Priyanka Sharma , Shruthi Nair , Haribhau Borate
DOI: 10.1007/S10854-018-9114-0
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摘要: In the present study we report one step facile synthesis of pristine lead bismuth selenide (PbBi2Se4) and reduced graphene oxide (rGO) its composites with PbBi2Se4. Formation PbBi2Se4 rGO–PbBi2Se4 composite were confirmed by X-ray diffraction photoelectron spectroscopy. The surface morphology topography investigated using scanning electron microscopy transmission revealed formation nano-flowers After coupling rGO shows sharp vertically protruded nano-sheets/nano-flaks originated from nano-flowers. Finally, field emission properties have been investigated. It has observed that emitter exhibited excellent low turn-on (~ 2.8 V/µm for 10 µA/cm2), high current density (~ 1288 µA/cm2 at 3.9 V/µm) superior stability (~ 4.5 h ~ 1 µA) compare to emitter. Thus, approach robust nature can provide prospects future development large-area applications such as flat-panel-display vacuum micro/nanoelectronics devices.